Wen-Hsing Liu

Robust High-Resistance State and Improved Endurance of $\hbox{HfO}_{X}$ Resistive Memory by Suppression of Current Overshoot

Yu-Sheng Chen, Heng-Yuan Lee, Pang-Shiu Chen et al. · IEEE Electron Device Letters · 2011 · 58 citations

Engineering, Materials Engineering, Materials Science +16

Experimental investigation of the reliability issue of RRAM based on high resistance state conduction

Lijie Zhang, Yen-Ya Hsu, Frederick T. Chen et al. · Nanotechnology · 2011 · 34 citations

Engineering, Electrical Engineering, Materials Science +16

Good Endurance and Memory Window for $ \hbox{Ti/HfO}_{x}$ Pillar RRAM at 50-nm Scale by Optimal Encapsulation Layer

Yu-Sheng Chen, Heng-Yuan Lee, Pang-Shiu Chen et al. · IEEE Electron Device Letters · 2011 · 33 citations

Engineering, Materials Engineering, Materials Science +17

Resistance switching for RRAM applications

Frederick T. Chen, Heng-Yuan Lee, Yu‐Sheng Chen et al. · Science China Information Sciences · 2011 · 31 citations

Engineering, Electrical Engineering, Materials Science +9

Scalability with silicon nitride encapsulation layer for Ti/HfOx pillar RRAM

Pei-Yi Gu, Yu‐Sheng Chen, Heng-Yuan Lee et al. · 2010 · 17 citations

Engineering, Materials Engineering, Materials Science +17