Miles Lindquist

ScAlN/GaN High-Electron-Mobility Transistors With 2.4-A/mm Current Density and 0.67-S/mm Transconductance

Andrew J. Green, J. Gillespie, Robert Fitch et al. · IEEE Electron Device Letters · 2019 · 120 citations · Full text

Semiconductors, Gan Template, Electrical Engineering +9

Lateral β-Ga₂O₃ field effect transistors

Kelson D. Chabak, Kevin Leedy, Andrew J. Green et al. · Semiconductor Science and Technology · 2019 · 117 citations · Full text

Materials Science, Wide-bandgap Semiconductor, Electrical Engineering +13

RF Power Performance of Sc(Al,Ga)N/GaN HEMTs at Ka-Band

Andrew J. Green, Neil Moser, Nicholas C. Miller et al. · IEEE Electron Device Letters · 2020 · 76 citations · Full text

Wide-bandgap Semiconductor, Electrical Engineering, Engineering +10

Sub-Micron Gallium Oxide Radio Frequency Field-Effect Transistors

Kelson D. Chabak, Dennis E. Walker, A.J. Green et al. · 2018 · 49 citations

Channel Device, Electrical Engineering, Beta-gallium Oxide +10

Pulsed Power Performance of <i>β</i>-Ga₂O₃ MOSFETs at L-Band

Neil Moser, Tadj Asel, Kyle J. Liddy et al. · IEEE Electron Device Letters · 2020 · 46 citations · Full text

Continuous Wave, Semiconductor Technology, Electrical Engineering +12