Yu. Matveyev

The new dedicated HAXPES beamline P22 at PETRAIII

Christoph Schlueter, A. Gloskovskii, Katrin Ederer et al. · AIP conference proceedings · 2019 · 121 citations · Full text

X-ray Crystallography, New Undulator Beamline, Optical Materials +16

Resistive switching and synaptic properties of fully atomic layer deposition grown TiN/HfO2/TiN devices

Yu. Matveyev, Konstantin Egorov, Andrey M. Markeev et al. · Journal of Applied Physics · 2015 · 91 citations

Engineering, Tin/hfo2/tin Devices, Phase Change Memory +18

Electronic band alignment and electron transport in Cr/BaTiO3/Pt ferroelectric tunnel junctions

A. Zenkevich, M. Minnekaev, Yu. Matveyev et al. · Applied Physics Letters · 2013 · 79 citations

Polarization Reversal, Engineering, Semiconductors +19

Impact of vacancies and impurities on ferroelectricity in PVD- and ALD-grown HfO2 films

Lutz Baumgarten, Thomas Szyjka, Terence Mittmann et al. · Applied Physics Letters · 2021 · 72 citations · Full text

Engineering, Ald-grown Hfo2 Films, Oxygen Vacancy Formation +16

Origin of the retention loss in ferroelectric Hf0.5Zr0.5O2-based memory devices

Anastasia Chouprik, Ekaterina Kondratyuk, Vitalii Mikheev et al. · Acta Materialia · 2020 · 64 citations

Materials Science, Retention Loss, Electrical Engineering +8