Applied Physics Letters · 2013 · 79 citations · 20 references
Polarization ReversalEngineeringSemiconductorsTunneling MicroscopyFerroelectric ApplicationQuantum MaterialsElectronic Band AlignmentCharge Carrier TransportMaterials ScienceOxide HeterostructuresElectrical EngineeringPhysicsOxide ElectronicsElectrostatic Potential ProfileElectron TransportUpward Polarization ReversalFerroelasticsApplied PhysicsCondensed Matter PhysicsMultilayer HeterostructuresThin FilmsTopological Heterostructures
Electroresistance in ferroelectric tunnel junctions is controlled by changes in the electrostatic potential profile across the junction upon polarization reversal of the ultrathin ferroelectric barrier layer. Here, hard X-ray photoemission spectroscopy is used to reconstruct the electric potential barrier profile in as-grown Cr/BaTiO3(001)/Pt(001) heterostructures. Transport properties of Cr/BaTiO3/Pt junctions with a sub-μm Cr top electrode are interpreted in terms of tunneling electroresistance with resistance changes of a factor of ∼30 upon polarization reversal. By fitting the I-V characteristics with the model employing an experimentally determined electric potential barrier we derive the step height changes at the BaTiO3/Pt (Cr/BaTiO3) interface +0.42(−0.03) eV following downward to upward polarization reversal.
20
Enhancement of Ferroelectricity in Strained BaTiO <sub>3</sub> Thin Films
Kyoung Jin Choi, Michael D. Biegalski, Yulan Li et al. · Science · 2004 · 1.9K citations
Schottky Barrier Heights and the Continuum of Gap States
J. Tersoff · Physical Review Letters · 1984 · 1.4K citations
Volker Heine · Physical Review · 1965 · 1.3K citations
Surface Characterization, Electrical Engineering, Semiconductor Device +13
Ferroelectricity in Ultrathin Perovskite Films
Dillon D. Fong, G. B. Stephenson, S. K. Streiffer et al. · Science · 2004 · 1.3K citations
Materials Science, Lead-free Perovskites, Perovskite Thin Films +14