Konstantin Egorov

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Publications

Citations

450

H-Index

Active since

2013

Affiliations

Moscow Institute of Physics and Technology(Current)

National Research Nuclear University MEPhI

Swiss Federal Laboratories for Materials Science and Technology

Research Institute of Molecular Electronics

ETH Zurich

Konstantin Egorov is an author at Moscow Institute of Physics and Technology specializing in materials science, materials engineering, and natural sciences.

ORCID

Publications per year

2013–2023

Publications

Resistive switching and synaptic properties of fully atomic layer deposition grown TiN/HfO2/TiN devices

Yu. Matveyev, Konstantin Egorov, Andrey M. Markeev et al. · Journal of Applied Physics · 2015 · 92 citations

Engineering, Electrical Engineering, Materials Science +17

Assessing Long‐Term Cycling Stability of Single‐Crystal Versus Polycrystalline Nickel‐Rich NCM in Pouch Cells with 6 mAh cm−2 Electrodes

Wengao Zhao, Lianfeng Zou, Leiting Zhang et al. · Small · 2022 · 87 citations · Full text

Natural Sciences, Materials Engineering, Materials Science +17

In Situ Control of Oxygen Vacancies in TaOx Thin Films via Plasma-Enhanced Atomic Layer Deposition for Resistive Switching Memory Applications

Konstantin Egorov, Dmitry S. Kuzmichev, Pavel S. Chizhov et al. · ACS Applied Materials & Interfaces · 2017 · 58 citations

Natural Sciences, Materials Engineering, Materials Science +17

Full ALD Ta 2 O 5 -based stacks for resistive random access memory grown with in vacuo XPS monitoring

Konstantin Egorov, Yu. Yu. Lebedinskiǐ, Andrey M. Markeev et al. · Applied Surface Science · 2015 · 45 citations

Engineering, Materials Engineering, Materials Science +10

Complementary and bipolar regimes of resistive switching in TiN/HfO2/TiN stacks grown by atomic‐layer deposition

Konstantin Egorov, Roman V. Kirtaev, Yu. Yu. Lebedinskiǐ et al. · physica status solidi (a) · 2015 · 40 citations

Natural Sciences, Materials Engineering, Materials Science +17

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