Publication | Closed Access
Origin of the retention loss in ferroelectric Hf0.5Zr0.5O2-based memory devices
64
Citations
37
References
2020
Year
Materials ScienceRetention LossElectrical EngineeringNon-volatile MemoryEngineeringFerroelectric ApplicationApplied PhysicsFerroelectric Random-access MemoryMemory DeviceMemory DevicesSemiconductor Memory
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