J.-E. Müller - Concepedia

Author

J.-E. Müller

Siemens (Germany)

Also Known As

J. Muller, J. Müller, J. Müller, J.-E. Muller, J.-E. Müller, Jan‐Erik Müller

Publications

377

Citations

H-Index

Concepts

All Affiliations

Siemens (Germany)University of Padua Fraunhofer Institute for Applied Solid State Physics Technische Universität Berlin Politecnico di Milano

About

J.-E. Müller is an author at Siemens (Germany) specializing in engineering, microelectronics, and electrical engineering.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	11	12	314
2	Electrical Engineering	8	8	216
3	Applied Physics	5	5	147
4	Computer Engineering	2	2	50
5	Education	1	1	19

J.-E. Müller

Publications

345

Citations

H-Index

Page 1

	Year	Citations
A simple method for the thermal resistance measurement of AlGaAs/GaAs heterojunction bipolar transistors N. Bovolon, P. Baureis, J.-E. Müller, IEEE Transactions on Electron Devices EngineeringThermal Resistance MeasurementSemiconductor DeviceNanoelectronicsThermal Resistance	1998	82
Design and fabrication of monolithic optical spot size transformers (MOSTs) for highly efficient fiber-chip coupling G. Wenger, L. Stoll, B.L. Weiss, Journal of Lightwave Technology Fiber AlignmentPhotonicsEngineeringSpot Size TransformersOptical Transmission System	1994	51
A GaAs HEMT MMIC chip set for automotive radar systems fabricated by optical stepper lithography J.-E. Müller, T. Grave, H.J. Siweris, IEEE Journal of Solid-State Circuits Electrical EngineeringMillimeter Wave TechnologyEngineeringRf SemiconductorCollision Avoidance	1997	35
A GaAs HEMT MMIC chip set for automotive radar systems fabricated by optical stepper lithography J.-E. Müller, A. Bangert, T. Grave, RadarMillimeter Wave TechnologyEngineeringRf SemiconductorGaas Mmic Solutions	2002	22
A short-term high-current-density reliability investigation of AlGaAs/GaAs heterojunction bipolar transistors N. Bovolon, R. Schultheis, J.-E. Müller, IEEE Electron Device Letters ReliabilityActivation EnergyElectrical EngineeringWide-bandgap SemiconductorEngineering	1998	19
Comparison of active versus passive on-wafer load-pull characterisation of microwave and mm-wave power devices J.-E. Müller, B. Gyselinckx Active LoadElectrical EngineeringMm-wave Power DevicesEngineeringPower Transistor	2002	19
Theoretical and experimental investigation of the collector-emitter offset voltage of AlGaAs/GaAs heterojunction bipolar transistors N. Bovolon, R. Schultheis, J.-E. Müller, IEEE Transactions on Electron Devices Electrical EngineeringEngineeringExperimental InvestigationBipolar Junction TransistorModerate Base	1999	16
A completely packaged strictly nonblocking 8×8 optical matrix switch on InP/InGaAsP G. Wenger, M. Schienle, J. Bellermann, Journal of Lightwave Technology Times/8 Matrix SwitchPhotonicsFree-space Optical NetworkOptical MaterialsOptical Matrix Switch	1996	15
A small chip size 2 W, 62% efficient HBT MMIC for 3 V PCN applications J.-E. Müller, P. Baureis, O. Berger, IEEE Journal of Solid-State Circuits Low-power ElectronicsElectrical EngineeringChip SizeEngineeringRf Semiconductor	1998	15
Accurate large‐signal GaAs MESFET and HEMT modeling for power MMIC amplifier design J.M. Dortu, J.-E. Müller, Marco Pirola, International Journal of Microwave and Millimeter-Wave Computer-Aided Engineering Device ModelingElectrical EngineeringEngineeringPower DeviceElectronic Engineering	1995	15

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