IEEE Transactions on Electron Devices · 1998 · 82 citations · 8 references
EngineeringElectrical EngineeringMaterials ScienceMicroelectronicsSemiconductor DevicesSemiconductor MaterialsDevice CharacterizationSemiconductor Device MaterialsSemiconductor PhysicsTemperature MeasurementThermal Properties Of MaterialsThermal Properties Of SemiconductorsHeterojunction Bipolar TransistorsHeterojunction DevicesOutput CharacteristicsSemiconductor CharacterizationTemperature-dependent Electrical MeasurementsThermal ResistanceThermal Resistance MeasurementTransistor Output Characteristics
A novel electrical method to accurately measure the thermal resistance of heterojunction bipolar transistors (HBT's) is presented. The key advantage of the method is its simplicity, because it requires only the measurement of the device DC output characteristics at two different temperatures. In this brief, the measurement technique is illustrated, applied to multifinger HBT's and compared with other methods.
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Thermal impedance extraction for bipolar transistors
D.T. Zweidinger, R.M. Fox, J.S. Brodsky et al. · IEEE Transactions on Electron Devices · 1996 · 65 citations