D. Pham

Fully-depleted SOI devices with TaSiN gate, HfO₂ gate dielectric, and elevated source/drain extensions

A. Vandooren, A. Barr, L. Mathew et al. · IEEE Electron Device Letters · 2003 · 38 citations

Engineering, Electrical Engineering, Materials Science +17

Mixed-signal performance of sub-100nm fully-depleted SOI devices with metal gate, high K (HfO/sub 2/) dielectric and elevated source/drain extensions

A. Vandooren, Aaron Thean, Yaping Du et al. · 2004 · 26 citations

Engineering, Electrical Engineering, Materials Science +17

50-nm fully depleted SOI CMOS technology with HfO/sub 2/ gate dielectric and TiN gate

A. Vandooren, S. Egley, T. Stephens et al. · IEEE Transactions on Nanotechnology · 2003 · 15 citations

Engineering, Electrical Engineering, Microelectronics +15

Dopant characterization of fin field-effect transistor structures using scanning capacitance microscopy

Alexander A. Khajetoorians, Junjie Li, Chih‐Kang Shih et al. · Journal of Applied Physics · 2007 · 10 citations

Engineering, Electrical Engineering, Materials Science +17