A. Barr

Fully-depleted SOI devices with TaSiN gate, HfO₂ gate dielectric, and elevated source/drain extensions

A. Vandooren, A. Barr, L. Mathew et al. · IEEE Electron Device Letters · 2003 · 38 citations

Electrical Engineering, Semiconductor Device, Engineering +11

Stoichiometry of bromide production from ceric oxidation of bromomalonic acid in the Belousov-Zhabotinskii reaction

Horst Dieter Foersterling, Linda Stuk, A. Barr et al. · The Journal of Physical Chemistry · 1993 · 31 citations

Chemical Measurement, Engineering, Chemical Analysis +13

Mixed-signal performance of sub-100nm fully-depleted SOI devices with metal gate, high K (HfO/sub 2/) dielectric and elevated source/drain extensions

A. Vandooren, Aaron Thean, Yaping Du et al. · 2004 · 26 citations

Low-power Electronics, Electrical Engineering, Metal Gate +15

50-nm fully depleted SOI CMOS technology with HfO/sub 2/ gate dielectric and TiN gate

A. Vandooren, S. Egley, T. Stephens et al. · IEEE Transactions on Nanotechnology · 2003 · 15 citations

Electrical Engineering, Gate Length, Engineering +12