Reduction of threading dislocation density and suppression of cracking in sputter-deposited AlN templates annealed at high temperatures

Kenjiro Uesugi, Yusuke Hayashi, Kanako Shojiki, +1

Applied Physics Express

Aluminium NitrideEngineeringSevere Plastic DeformationMechanical EngineeringThin Film Process Technology +20

Suppression of dislocation-induced spiral hillocks in MOVPE-grown AlGaN on face-to-face annealed sputter-deposited AlN template

Kenjiro Uesugi, Kanako Shojiki, Yuta Tezen, +2

Applied Physics Letters

Materials ScienceMaterials EngineeringAluminium NitrideEngineeringDislocation Interaction +11

Red to blue wavelength emission of N-polar $(000\bar{1})$ InGaN light-emitting diodes grown by metalorganic vapor phase epitaxy

Kanako Shojiki, Tomoyuki Tanikawa, Jung Hun Choi, +4

Applied Physics Express

SemiconductorsPhotonicsElectrical EngineeringSolid-state LightingEngineering +13

Toward Bright and Pure Single Photon Emitters at 300 K Based on GaN Quantum Dots on Silicon

Sebastian Tamariz, Gordon Callsen, Johann Stachurski, +3

ACS Photonics

263 nm wavelength UV-C LED on face-to-face annealed sputter-deposited AlN with low screw- and mixed-type dislocation densities

Kenjiro Uesugi, Shigeyuki Kuboya, Kanako Shojiki, +4

Applied Physics Express

Aluminium NitrideShort Wavelength OpticOptical MaterialsEngineeringOptical Properties +14

Quantitative evaluation of strain relaxation in annealed sputter-deposited AlN film

Shuichi Tanaka, Kanako Shojiki, Kenjiro Uesugi, +2

Journal of Crystal Growth

Materials ScienceAluminium NitrideMaterial AnalysisEngineeringStrain Relaxation +6

Annealing behaviors of vacancy-type defects in AlN deposited by radio-frequency sputtering and metalorganic vapor phase epitaxy studied using monoenergetic positron beams

Akira Uedono, Kanako Shojiki, Kenjiro Uesugi, +6

Journal of Applied Physics

Aln FilmAluminium NitrideEngineeringRadio-frequency SputteringVacancy Clusters +17

High‐Quality AlN Template Prepared by Face‐to‐Face Annealing of Sputtered AlN on Sapphire

Kanako Shojiki, Kenjiro Uesugi, Shigeyuki Kuboya, +3

physica status solidi (b)

Aln FilmAluminium NitrideFace‐to‐face AnnealingEngineeringSputtered Aln +14

Improvement of surface morphology of nitrogen-polar GaN by introducing indium surfactant during MOVPE growth

Takashi Aisaka, Tomoyuki Tanikawa, Takeshi Kimura, +4

Japanese Journal of Applied Physics

Materials ScienceEngineeringNanotechnologySurface ScienceApplied Physics +10

Reduction of threading dislocation densities of N-polar face-to-face annealed sputtered AlN on sapphire

Kanako Shojiki, Kenjiro Uesugi, Shigeyuki Kuboya, +1

Journal of Crystal Growth

Materials ScienceMaterials EngineeringDislocation DensitiesAluminium NitrideEngineering +9