Red to blue wavelength emission of N-polar $(000\bar{1})$ InGaN light-emitting diodes grown by metalorganic vapor phase epitaxy

Abstract

N-polar (−c-plane) InGaN light-emitting diodes with emission wavelengths ranging from blue to green to red were fabricated on a c-plane sapphire substrate by metalorganic vapor phase epitaxy. The optimization of growth conditions for −c-plane InGaN/GaN multiple quantum wells was performed. As a result, the extension of the emission wavelength from 444 to 633 nm under a constant current of 20 mA was achieved by changing the growth temperature of quantum wells from 880 to 790 °C.