Stoyan Jeliazkov

Electrical and optical properties of thick highly doped p‐type GaN layers grown by HVPE

A. Usikov, O. V. Kovalenkov, V. Soukhoveev et al. · Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics · 2008 · 29 citations

Materials Science, Materials Engineering, Electrical Engineering +15

10 kV SiC BJTs — Static, switching and reliability characteristics

Siddarth Sundaresan, Stoyan Jeliazkov, Brian Grummel et al. · 2013 · 25 citations

Semiconductor Technology, Electrical Engineering, Engineering +12

Characterization of the Stability of Current Gain and Avalanche-Mode Operation of 4H-SiC BJTs

Siddarth Sundaresan, Aye-Mya Soe, Stoyan Jeliazkov et al. · IEEE Transactions on Electron Devices · 2012 · 19 citations

4H-sic Bjts, Semiconductor Technology, Electrical Engineering +14

1200 V-Class 4H-SiC “Super” Junction Transistors with Current Gains of 88 and Ultra-Fast Switching Capability

Ranbir Singh, Stoyan Jeliazkov, Eric Lieser · Materials science forum · 2012 · 14 citations

Semiconductor Technology, Electrical Engineering, Engineering +13

Rapidly Maturing SiC Junction Transistors Featuring Current Gain (β) > 130, Blocking Voltages up to 2700 V and Stable Long-Term Operation

Siddarth Sundaresan, Stoyan Jeliazkov, Brian Grummel et al. · Materials science forum · 2014 · 10 citations

Electrical Engineering, Engineering, Stable Long-term Operation +10