N. Zainal

Molecular beam epitaxy as a method for the growth of freestanding zinc-blende (cubic) GaN layers and substrates

N. Zainal, C. R. Staddon, A. J. Kent et al. · Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena · 2010 · 33 citations

Materials Science, Materials Engineering, Electrical Engineering +12

Current-voltage characteristics of zinc-blende (cubic) Al0.3Ga0.7N/GaN double barrier resonant tunneling diodes

N. Zainal, Christopher J. Mellor, C. T. Foxon et al. · Applied Physics Letters · 2010 · 25 citations

Wide-bandgap Semiconductor, Double Barrier Resonant, Electrical Engineering +12

Molecular beam epitaxy of crystalline and amorphous GaN layers with high As content

C. R. Staddon, R. P. Campion, N. Zainal et al. · Journal of Crystal Growth · 2009 · 24 citations

Materials Science, Wide-bandgap Semiconductor, Engineering +4

Alteration of structural and optical properties in quaternary Al0.1In0.1Ga0.8N films using ultraviolet assisted photo-electrochemical etching route

Way Foong Lim, Hock Jin Quah, Z. Hassan et al. · Journal of Alloys and Compounds · 2015 · 23 citations

Materials Science, Aluminium Nitride, Optical Materials +8

SiO2 Capped-ZnO nanorods for enhanced random laser emission

Abdullah Taha Ali, W. Maryam, Yuwei Huang et al. · Optics & Laser Technology · 2021 · 21 citations

Materials Science, Optical Materials, Engineering +6