Molecular beam epitaxy of crystalline and amorphous GaN layers with high As content - Concepedia

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Molecular beam epitaxy of crystalline and amorphous GaN layers with high As content

24

Citations

8

References

2009

Year

C. R. Staddon, R. P. Campion, N. Zainal, A. J. Kent, C. T. Foxon, C.H. Chen, K. M. Yu, W. Walukiewicz

Journal of Crystal Growth

Materials ScienceWide-bandgap SemiconductorEngineeringApplied PhysicsGan Power DeviceMolecular Beam EpitaxyAmorphous Gan Layers

References

	Year	Citations

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