C. R. Staddon

High-quality GaMnAs films grown with arsenic dimers

R. P. Campion, K. W. Edmonds, Lixia Zhao et al. · Journal of Crystal Growth · 2002 · 93 citations · Full text

Materials Science, Engineering, Applied Physics +5

Formation of Monolayer Graphene by Annealing Sacrificial Nickel Thin Films

Andrew J. Pollard, Rahul R. Nair, S. N. Sabki et al. · The Journal of Physical Chemistry C · 2009 · 76 citations

Materials Science, Graphene Nanomeshes, Ni Thin Films +12

Growth front nucleation of rubrene thin films for high mobility organic transistors

C. H. Hsu, Jinxiang Deng, C. R. Staddon et al. · Applied Physics Letters · 2007 · 59 citations

Engineering, Organic Electronics, Organic Transistors +17

The growth of GaMnAs films by molecular beam epitaxy using arsenic dimers

R. P. Campion, K. W. Edmonds, Lixia Zhao et al. · Journal of Crystal Growth · 2003 · 48 citations

Materials Science, Materials Engineering, Epitaxial Growth +10

Molecular beam epitaxy grown (Ga,Mn)(As,P) with perpendicular to plane magnetic easy axis

A. W. Rushforth, M. Wang, N. R. S. Farley et al. · Journal of Applied Physics · 2008 · 36 citations · Full text

Materials Science, Magnetism, Magnetic Properties +14