C. M. Park

Photoluminescence studies of GaN nanorods on Si (111) substrates grown by molecular-beam epitaxy

Young S. Park, C. M. Park, Danyang Fu et al. · Applied Physics Letters · 2004 · 77 citations

Electrical Engineering, Photoluminescence, Molecular-beam Epitaxy +13

Time-resolved and time-integrated photoluminescence studies of coupled asymmetric GaN quantum discs embedded in AlGaN barriers

J. H. Na, Robert A. Taylor, James H. Rice et al. · Applied Physics Letters · 2005 · 25 citations

Wide-bandgap Semiconductor, Electrical Engineering, Photoluminescence +13

Raman characterization of electronic properties of self-assembled GaN nanorods grown by plasma-assisted molecular-beam epitaxy

D. Wang, C. C. Tin, John R. Williams et al. · Applied Physics Letters · 2005 · 22 citations

Materials Science, Lo Phonon Peak, Engineering +15

Electron trap level in a GaN nanorod p-n junction grown by molecular-beam epitaxy

Young S. Park, C. M. Park, C. J. Park et al. · Applied Physics Letters · 2006 · 20 citations

Electron Trap Level, Wide-bandgap Semiconductor, Electrical Engineering +14

Deep level defects in Si-doped AlxGa1−xN films grown by molecular-beam epitaxy

Young S. Park, C. J. Park, C. M. Park et al. · Applied Physics Letters · 2005 · 16 citations

Materials Science, Materials Engineering, Si-doped Alxga1−xn Films +14