Danyang Fu

Photoluminescence studies of GaN nanorods on Si (111) substrates grown by molecular-beam epitaxy

Young S. Park, C. M. Park, Danyang Fu et al. · Applied Physics Letters · 2004 · 77 citations

Electrical Engineering, Photoluminescence, Molecular-beam Epitaxy +13

Ferromagnetic behavior of p-type GaN epilayer implanted with Fe+ ions

Yoon Shon, Young Hae Kwon, Y. S. Park et al. · Journal of Applied Physics · 2003 · 38 citations

Materials Science, Magnetism, Electrical Engineering +15

Toward Φ56 mm Al-Polar AlN Single Crystals Grown by the Homoepitaxial PVT Method

Danyang Fu, Dan Lei, Zhe Li et al. · Crystal Growth & Design · 2022 · 31 citations

Aluminium Nitride, Optical Materials, Engineering +16

Influence of crucible shape on mass transport in AlN crystal growth by physical vapor transport process

Qikun Wang, Jiali Huang, Danyang Fu et al. · Journal of Crystal Growth · 2019 · 22 citations

Materials Science, Mass Transport, Aluminium Nitride +10

Optical characteristics of Mn+-ion-implanted GaN epilayers

Yoon Shon, Younghae Kwon, Tae Won Kang et al. · Journal of Crystal Growth · 2002 · 21 citations

Electrical Engineering, Optical Materials, Engineering +5