S. Lavanga

Influence of Buffer Carbon Doping on Pulse and AC Behavior of Insulated-Gate Field-Plated Power AlGaN/GaN HEMTs

G. Verzellesi, Luca Morassi, Gaudenzio Meneghesso et al. · IEEE Electron Device Letters · 2014 · 114 citations · Full text

Engineering, Electrical Engineering, Materials Science +15

DC and RF performance of surface channel MESFETs on H-terminated polycrystalline diamond

P. Calvani, A. Corsaro, M. Girolami et al. · Diamond and Related Materials · 2009 · 36 citations

Engineering, Electrical Engineering, Materials Science +13

A 20 Watt Micro-strip X-Band AlGaN/GaN HPA MMIC for Advanced Radar Applications

C. Costrini, M. Calori, A. Cetronio et al. · 2008 · 31 citations

Engineering, Electrical Engineering, Microelectronics +16

Fabrication and nonlinear characterization of GaN HEMTs on SiC and sapphire for high-power applications

Vittorio Camarchia, Simona Donati Guerrieri, Marco Pirola et al. · International Journal of RF and Microwave Computer-Aided Engineering · 2005 · 27 citations

Engineering, Electrical Engineering, Materials Science +17

Threshold voltage instabilities in D-mode GaN HEMTs for power switching applications

Gaudenzio Meneghesso, Riccardo Silvestri, Matteo Meneghini et al. · 2014 · 21 citations · Full text

Engineering, Electrical Engineering, Materials Engineering +17