K. L. Seaward - Concepedia

Author

K. L. Seaward

Hewlett-Packard (United States)

Also Known As

K. L. Seaward, K. Seaward, K.L. Seaward, Karen Seaward

Publications

308

Citations

H-Index

Concepts

All Affiliations

Hewlett-Packard (United States)PerkinElmer (United States)Stanford University

About

K. L. Seaward is an author at Hewlett-Packard (United States) specializing in engineering, applied physics, and materials science.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	11	11	299
2	Applied Physics	11	11	299
3	Electrical Engineering	5	5	101
4	Chemistry	2	2	121
5	Materials Engineering	2	2	25

K. L. Seaward

Publications

299

Citations

H-Index

Page 1

	Year	Citations
An analytical study of etch and etch-stop reactions for GaAs on AlGaAs in CCl2F2 plasma K. L. Seaward, N. Moll, D. Coulman, Journal of Applied Physics EngineeringCcl2f2 PlasmaAnalytical StudySurface ScienceApplied Physics	1987	82
Role of ions in electron cyclotron resonance plasma-enhanced chemical vapor deposition of silicon dioxide K. L. Seaward, J. E. Turner, K. Nauka, Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena Materials ScienceEngineeringSurface ScienceApplied PhysicsIon Energy	1995	39
Surface contamination and damage from CF4 and SF6 reactive ion etching of silicon oxide on gallium arsenide K. L. Seaward, N. Moll, William F. Stickle Journal of Electronic Materials Materials ScienceIon ImplantationEngineeringSurface ContaminationSurface Science	1990	30
Semiconductor damage from inert and molecular gas plasmas K. L. Seaward, N. Moll Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena Electrical EngineeringPlasma ElectronicsEngineeringPhysicsDamage Depth Scale	1992	29
Passivation of GaAs surfaces and AlGaAs/GaAs heterojunction bipolar transistors using sulfide solutions and SiN<i>x</i> overlayer V. Malhotra, L.H. Camnitz, K. L. Seaward, Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena SemiconductorsSemiconductor TechnologyElectrical EngineeringEngineeringGaas Surfaces	1995	24
Donor neutralization in GaAs after plasma silicon nitride deposition K. L. Seaward Applied Physics Letters Donor NeutralizationElectrical EngineeringEngineeringPhysicsNeutralization Correlates	1992	18
The role of aluminum in selective reactive ion etching of GaAs on AlGaAs K. L. Seaward, N. Moll, William F. Stickle Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena Materials ScienceAluminium NitrideElectrical EngineeringBarrier LayersEngineering	1988	18
Auger electron spectroscopy and sputter/Auger analyses of thin films of SiC<i>x</i> Per Morgen, K. L. Seaward, Troy W. Barbee Journal of Vacuum Science & Technology A Vacuum Surfaces and Films Materials ScienceSurface TechnologyEngineeringElectron SpectroscopyChemical Information	1985	17
Thermal Stability of a-C:F,H Films Deposited by Electron Cyclotron Resonance Plasma Enhanced Chemical Vapor Deposition Jeremy Theil, Francoise Mertz, M.B. Yairi, MRS Proceedings Materials ScienceEngineeringApplied PhysicsH Films DepositedChemical Vapor Deposition	1997	17
The synthesis of SiC<i>x</i> films by dual-source sputter deposition K. L. Seaward, Troy W. Barbee, William A. Tiller Journal of Vacuum Science & Technology A Vacuum Surfaces and Films Materials EngineeringMaterials ScienceEngineeringCarbon TargetsApplied Physics	1986	13

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