M.S. Peffley

Effects of substrate misorientation on the properties of (Al, Ga)As grown by molecular beam epitaxy

R. Tsui, J. Curless, G. Krämer et al. · Journal of Applied Physics · 1985 · 48 citations

Aluminium Nitride, Engineering, Crystal Growth Technology +17

Properties of Al<i>x</i>Ga1−<i>x</i>As (<i>x</i>Al≂0.3) grown by molecular-beam epitaxy on misoriented substrates

R. Tsui, J. Curless, G. Krämer et al. · Journal of Applied Physics · 1986 · 40 citations

Optical Materials, Smooth Layers, Engineering +17

Al0.3Ga0.7As/GaAs single quantum well structures grown by molecular beam epitaxy on misoriented substrates

R. Tsui, G. Krämer, J. Curless et al. · Applied Physics Letters · 1986 · 34 citations · Full text

Intrinsic Photoluminescence, Aluminium Nitride, Optical Materials +17

Kinetics of the Hydrogenation of Silicon Tetrachloride

W. M. Ingle, M.S. Peffley · Journal of The Electrochemical Society · 1985 · 31 citations

Hydrogen Energy Technology, Hydrogen Production, Gas Conversion +22

Low-frequency noise in heterojunction FETs with low-temperature buffer

S. Tehrani, Arthur D. van Rheenen, M.M. Hoogstra et al. · IEEE Transactions on Electron Devices · 1992 · 17 citations

Semiconductor Technology, Electrical Engineering, Engineering +7