Rui Zhang

Physical and chemical mechanisms in oxide-based resistance random access memory

Kuan‐Chang Chang, Ting‐Chang Chang, Tsung‐Ming Tsai et al. · Nanoscale Research Letters · 2015 · 146 citations · Full text

Engineering, Materials Engineering, Materials Science +16

Complementary resistive switching behavior induced by varying forming current compliance in resistance random access memory

Yi‐Ting Tseng, Tsung‐Ming Tsai, Ting‐Chang Chang et al. · Applied Physics Letters · 2015 · 55 citations · Full text

Engineering, Materials Engineering, Materials Science +17

Effects of Varied Negative Stop Voltages on Current Self-Compliance in Indium Tin Oxide Resistance Random Access Memory

Chih‐Yang Lin, Kuan‐Chang Chang, Ting‐Chang Chang et al. · IEEE Electron Device Letters · 2015 · 48 citations

Engineering, Materials Engineering, Materials Science +17

Resistive Switching Mechanism of Oxygen-Rich Indium Tin Oxide Resistance Random Access Memory

Tsung‐Ming Tsai, Kuan‐Chang Chang, Ting‐Chang Chang et al. · IEEE Electron Device Letters · 2016 · 41 citations

Engineering, Materials Engineering, Materials Science +17

Improvement of Resistive Switching Characteristic in Silicon Oxide-Based RRAM Through Hydride- Oxidation on Indium Tin Oxide Electrode by Supercritical CO<sub>2</sub> Fluid

Kuan‐Chang Chang, Tsung‐Ming Tsai, Ting‐Chang Chang et al. · IEEE Electron Device Letters · 2015 · 25 citations

Natural Sciences, Materials Engineering, Materials Science +17