I. G. Gale

Relative importance of the Si–Si bond and Si–H bond for the stability of amorphous silicon thin film transistors

Ralf B. Wehrspohn, S. C. Deane, I. D. French et al. · Journal of Applied Physics · 2000 · 150 citations

Engineering, Relative Importance, Bond Defect Creation +16

Doping studies in MOVPE-grown Cd_xHg_1-xTe

C. D. Maxey, I. G. Gale, J. B. Clegg et al. · Semiconductor Science and Technology · 1993 · 47 citations

Materials Engineering, Semiconductors, Materials Science +13

Impurities and metalorganic chemical-vapor deposition growth of mercury cadmium telluride

B.C. Easton, C. D. Maxey, P.A.C. Whiffin et al. · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 1991 · 35 citations

Materials Science, Materials Engineering, Chemical Engineering +15

SIMS profile simulation using delta function distributions

J. B. Clegg, I. G. Gale · Surface and Interface Analysis · 1991 · 30 citations

Engineering, Simulation, Integrated Circuits +20

Urbach energy dependence of the stability in amorphous silicon thin-film transistors

Ralf B. Wehrspohn, S. C. Deane, I. D. French et al. · Applied Physics Letters · 1999 · 26 citations

Semiconductor Technology, Electrical Engineering, H Tfts +13