P. A. Piacente

Platinum silicide ohmic contacts to shallow junctions in silicon

Shimon Cohen, P. A. Piacente, G. Gildenblat et al. · Journal of Applied Physics · 1982 · 58 citations

Engineering, Electrical Engineering, Materials Science +17

"Insulated gate bipolar transistor (IGBT) with a trench gate structure "

H.-R. Chang, B. Jayant Baliga, J. Kretchmer et al. · 1987 · 46 citations

Engineering, Electrical Engineering, Microelectronics +10

A 50-V, 0.7-m Omega *cm/sup 2/, vertical-power DMOSFET

K. Shenai, C.S. Korman, B. Jayant Baliga et al. · IEEE Electron Device Letters · 1989 · 31 citations

Engineering, Electrical Engineering, Materials Science +14

Properties of tetrathiotetracene nickel<i>bis</i>-(ethylene-1, 2-dithiolene), a new quasi-one-dimensional conductor

J. W. Bray, H. R. Hart, Leonard V. Interrante et al. · Physical review. B, Solid state · 1977 · 22 citations

Natural Sciences, Materials Science, Physics +14

Effect of Circuit Structure on Planarization Resist Thickness

R. H. Wilson, P. A. Piacente · Journal of The Electrochemical Society · 1986 · 21 citations

Engineering, Electrical Engineering, Materials Science +15