J. Rebollo - Concepedia

Author

J. Rebollo

Centro Nacional de Microelectrónica ORCID

Also Known As

Centro de Estudios Universitario Cardenal Spínola CEU, J Rebollo, J. REBOLLO, J. Rebollo, Jose A. Rebollo, Jose Antonio Rebollo, Jose Rebollo, José Rebollo, Rebollo, Rebollo, J

158

Publications

3.8K

Citations

H-Index

Concepts

All Affiliations

Centro Nacional de Microelectrónica Institut de Microelectrònica de Barcelona Consejo Superior de Investigaciones Científicas Universitat Autònoma de Barcelona Institut de Ciència de Materials de Barcelona

About

J. Rebollo is an author at Centro Nacional de Microelectrónica specializing in engineering, electrical engineering, and microelectronics.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	17	35	3.3K
2	Electrical Engineering	16	31	3.2K
3	Applied Physics	14	17	2.8K
4	Materials Engineering	4	4	110
5	Computer Engineering	2	2	28

J. Rebollo

Publications

3.4K

Citations

H-Index

Page 1

	Year	Citations
A Survey of Wide Bandgap Power Semiconductor Devices José del R. Millán, Philippe Godignon, X. Perpiñà, IEEE Transactions on Power Electronics Wide-bandgap SemiconductorEngineeringPower DevicesNew GenerationPower Electronics	2013	2.4K
Power module electronics in HEV/EV applications: New trends in wide-bandgap semiconductor technologies and design aspects Asier Matallana, Edorta Ibarra, Jon Andreu, Renewable and Sustainable Energy Reviews Wide-bandgap SemiconductorElectrical EngineeringEngineeringPower IcHev/ev Applications	2019	162
Long-Term Reliability of Railway Power Inverters Cooled by Heat-Pipe-Based Systems X. Perpiñà, X. Jordà, J. Rebollo, IEEE Transactions on Industrial Electronics Power EngineeringEngineeringEnergy EfficiencyIgbt ModulesIgbt Module	2010	59
Analysis of Clamped Inductive Turnoff Failure in Railway Traction IGBT Power Modules Under Overload Conditions X. Perpiñà, J.F. Servière, J. Urresti, IEEE Transactions on Industrial Electronics Electrical EngineeringOverload ConditionsEngineeringHigh Voltage EngineeringPower Device	2010	55
High frequency characteristics and modelling of p-type 6H-silicon carbide MOS structures J.F. Fernández, Philippe Godignon, S. Berberich, Solid-State Electronics Materials EngineeringElectrical EngineeringEngineeringNanoelectronicsApplied Physics	1996	45
Analysis of hot-carrier degradation in a SOI LDMOS transistor with a steep retrograde drift doping profile J. Roig, D. Flores, J. Urresti, Microelectronics Reliability Steep Retrograde DriftElectrical EngineeringHot-carrier DegradationEngineeringElectronic Engineering	2004	39
IGBT module failure analysis in railway applications X. Perpiñà, J.F. Servière, X. Jordà, Microelectronics Reliability ReliabilityRailway TrafficElectrical EngineeringReliability EngineeringEngineering	2008	39
Study of novel techniques for reducing self-heating effects in SOI power LDMOS J. Roig, D. Flores, S. Hidalgo, Solid-State Electronics Electrical EngineeringEngineeringNovel TechniquesSelf-heating EffectsEnergy Efficiency	2002	35
First-principles study of n-type dopants and their clustering in SiC Riccardo Rurali, Philippe Godignon, J. Rebollo, Applied Physics Letters Materials ScienceMaterials EngineeringN-type DopantsEngineeringPhysics	2003	28
Layout Role in Failure Physics of IGBTs Under Overloading Clamped Inductive Turnoff X. Perpiñà, Ignasi Cortés, J. Urresti, IEEE Transactions on Electron Devices Device ModelingElectrical EngineeringEngineeringHardware ReliabilityChip Core	2012	28

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