Ö. Vural

Temperature dependent negative capacitance behavior of Al/rhodamine-101/n-GaAs Schottky barrier diodes and Rs effects on the C–V and G/ω–V characteristics

Ö. Vural, Yasemin Şafak, A. Türüt et al. · Journal of Alloys and Compounds · 2011 · 64 citations

Semiconductor Technology, Electrical Engineering, Engineering +4

Frequency and voltage dependence of dielectric properties and electric modulus in Au/PVC + TCNQ/p-Si structure at room temperature

Ahmet Kaya, Ö. Vural, H. Tecimer et al. · Current Applied Physics · 2013 · 61 citations

Materials Engineering, Materials Science, Electrical Engineering +8

Current–voltage characteristics of Al/Rhodamine-101/n-GaAs structures in the wide temperature range

Ö. Vural, Yasemin Şafak, Ş. Altındal et al. · Current Applied Physics · 2009 · 57 citations

Semiconductor Technology, Electrical Engineering, Engineering +3

Capacitance/Conductance–Voltage–Frequency Characteristics of ${\rm Au}/{\rm PVC}+{\rm TCNQ}/{\rm p}\hbox{-}{\rm Si}$ Structures in Wide Frequency Range

Ahmet Kaya, H. Tecimer, Ö. Vural et al. · IEEE Transactions on Electron Devices · 2014 · 33 citations · Full text

Numerical Analysis, \Rm Tcnq, Electrical Engineering +11

The effect of Mo-doped PVC+TCNQ interfacial layer on the electrical properties of Au/PVC+TCNQ/p-Si structures at room temperature

S. Demirezen, Ahmet Kaya, Ö. Vural et al. · Materials Science in Semiconductor Processing · 2015 · 32 citations

Materials Science, Room Temperature, Electrical Engineering +7