Yasemin Şafak

Investigation of dielectric relaxation and ac electrical conductivity using impedance spectroscopy method in (AuZn)/TiO2/p-GaAs(110) schottky barrier diodes

Yasemin Şafak, T. Asar, Ş. Altındal et al. · Journal of Alloys and Compounds · 2015 · 101 citations

Materials Science, Electrical Engineering, Semiconductor Device +9

Temperature dependent negative capacitance behavior in (Ni/Au)/AlGaN/AlN/GaN heterostructures

Engin Arslan, Yasemin Şafak, Ş. Altındal et al. · Journal of Non-Crystalline Solids · 2010 · 75 citations · Full text

Physics, Aluminum Gallium Nitride, Applied Physics +3

Temperature dependent negative capacitance behavior of Al/rhodamine-101/n-GaAs Schottky barrier diodes and Rs effects on the C–V and G/ω–V characteristics

Ö. Vural, Yasemin Şafak, A. Türüt et al. · Journal of Alloys and Compounds · 2011 · 64 citations

Semiconductor Technology, Electrical Engineering, Engineering +4

Current–voltage characteristics of Al/Rhodamine-101/n-GaAs structures in the wide temperature range

Ö. Vural, Yasemin Şafak, Ş. Altındal et al. · Current Applied Physics · 2009 · 57 citations

Semiconductor Technology, Electrical Engineering, Engineering +3

Electrical characterization of MS and MIS structures on AlGaN/AlN/GaN heterostructures

Engin Arslan, Serkan Bütün, Yasemin Şafak et al. · Microelectronics Reliability · 2010 · 44 citations

Aluminium Nitride, Wide-bandgap Semiconductor, Electrical Engineering +6