Yasunori Tokuda

Remarkable breakdown voltage enhancement in AlGaN channel high electron mobility transistors

Takuma Nanjo, Misaichi Takeuchi, Muneyoshi Suita et al. · Applied Physics Letters · 2008 · 148 citations

Wide-bandgap Semiconductor, Electrical Engineering, Engineering +8

AlGaN Channel HEMT With Extremely High Breakdown Voltage

Takuma Nanjo, Akifumi Imai, Yosuke Suzuki et al. · IEEE Transactions on Electron Devices · 2013 · 130 citations

Wide-bandgap Semiconductor, Algan Channel Hemt, Electrical Engineering +11

Realization of quaternary logic circuits by n-channel MOS devices

Y. Yasuda, Yasunori Tokuda, Shigeaki Zaima et al. · IEEE Journal of Solid-State Circuits · 1986 · 92 citations

Low-power Electronics, Electrical Engineering, Engineering +9

First Operation of AlGaN Channel High Electron Mobility Transistors

Takuma Nanjo, Misaichi Takeuchi, Muneyoshi Suita et al. · Applied Physics Express · 2007 · 87 citations

Wide-bandgap Semiconductor, Electrical Engineering, Wider Bandgap Algan +11

Fabrication of Terahertz Planar Metamaterials Using a Super-Fine Ink-Jet Printer

Keisuke Takano, Taku Kawabata, Cho-Fan Hsieh et al. · Applied Physics Express · 2009 · 73 citations

Materials Science, Silver Paste Ink, Terahertz Devices +15