Seongjun Seo

Analysis of Failure Mechanisms and Extraction of Activation Energies $(E_{a})$ in 21-nm nand Flash Cells

Kyunghwan Lee, Myounggon Kang, Seongjun Seo et al. · IEEE Electron Device Letters · 2012 · 42 citations

Electrical Engineering, Engineering, Hardware Reliability +14

Activation Energies $(E_{a})$ of Failure Mechanisms in Advanced NAND Flash Cells for Different Generations and Cycling

Kyunghwan Lee, Myounggon Kang, Seongjun Seo et al. · IEEE Transactions on Electron Devices · 2013 · 41 citations

Activation Energy, Electrical Engineering, Engineering +15

An Accurate Compact Model Considering Direct-Channel Interference of Adjacent Cells in Sub-30-nm nand Flash Technologies

Myounggon Kang, Il Han Park, Ik‐Joon Chang et al. · IEEE Electron Device Letters · 2012 · 24 citations

Device Modeling, Threshold Voltage Variation, Electrical Engineering +14

Generation Dependence of Retention Characteristics in Extremely Scaled NAND Flash Memory

Duckseoung Kang, Kyunghwan Lee, Seongjun Seo et al. · IEEE Electron Device Letters · 2013 · 22 citations

Non-volatile Memory, Engineering, Computer Architecture +16

Separation of Corner Component in TAT Mechanism in Retention Characteristics of Sub 20-nm NAND Flash Memory

Kyunghwan Lee, Myounggon Kang, Seongjun Seo et al. · IEEE Electron Device Letters · 2014 · 15 citations

Trap-assisted Tunneling, Non-volatile Memory, Electrical Engineering +12