Ahtisham Pampori

ASM GaN: Industry Standard Model for GaN RF and Power Devices—Part 1: DC, CV, and RF Model

Sourabh Khandelwal, Yogesh Singh Chauhan, Tor A. Fjeldly et al. · IEEE Transactions on Electron Devices · 2018 · 157 citations

Wide-bandgap Semiconductor, Engineering, Power Electronics +17

A New Small-Signal Parameter Extraction Technique for Large Gate-Periphery GaN HEMTs

Sheikh Aamir Ahsan, Ahtisham Pampori, Sudip Ghosh et al. · IEEE Microwave and Wireless Components Letters · 2017 · 33 citations

Wide-bandgap Semiconductor, Electrical Engineering, Gan Hemts +7

Electrical Characterization and Modeling of GaN HEMTs at Cryogenic Temperatures

Mohammad Sajid Nazir, Pragya Kushwaha, Ahtisham Pampori et al. · IEEE Transactions on Electron Devices · 2022 · 28 citations

Wide-bandgap Semiconductor, Electrical Engineering, Electronic Devices +12

Modeling of Bias-Dependent Effective Velocity and Its Impact on Saturation Transconductance in AlGaN/GaN HEMTs

Ahtisham Pampori, Sheikh Aamir Ahsan, Raghvendra Dangi et al. · IEEE Transactions on Electron Devices · 2021 · 19 citations

Wide-bandgap Semiconductor, Engineering, Bias-dependent Effective Velocity +16

Modeling and Analysis of Double Channel GaN HEMTs Using a Physics-Based Analytical Model

Rasik Rashid Malik, Mehak Ashraf Mir, Zarak Bhat et al. · IEEE Journal of the Electron Devices Society · 2021 · 12 citations · Full text

Device Modeling, Wide-bandgap Semiconductor, Electrical Engineering +14