Ahtisham Pampori - Concepedia

Author

Ahtisham Pampori

Indian Institute of Technology Kanpur ORCID

Also Known As

Ahtisham Pampori, Ahtisham Ul Haq Pampori, Ahtisham-ul-Haq Pampori

Publications

359

Citations

H-Index

Concepts

All Affiliations

Indian Institute of Technology Kanpur National Institute of Technology Srinagar Macquarie University

About

Ahtisham Pampori is an author at Indian Institute of Technology Kanpur specializing in applied physics, electrical engineering, and engineering.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	5	5	249
2	Applied Physics	5	5	249
3	Electrical Engineering	5	5	249
4	Physics	4	4	92
5	Electronic Devices	1	1	28

Ahtisham Pampori

Publications

269

Citations

H-Index

Page 1

	Year	Citations
ASM GaN: Industry Standard Model for GaN RF and Power Devices—Part 1: DC, CV, and RF Model Sourabh Khandelwal, Yogesh Singh Chauhan, Tor A. Fjeldly, IEEE Transactions on Electron Devices Wide-bandgap SemiconductorEngineeringPower ElectronicsAdvance Spice ModelElectromagnetic Compatibility	2018	157
A New Small-Signal Parameter Extraction Technique for Large Gate-Periphery GaN HEMTs Sheikh Aamir Ahsan, Ahtisham Pampori, Sudip Ghosh, IEEE Microwave and Wireless Components Letters Wide-bandgap SemiconductorElectrical EngineeringGan HemtsEngineeringPhysics	2017	33
Electrical Characterization and Modeling of GaN HEMTs at Cryogenic Temperatures Mohammad Sajid Nazir, Pragya Kushwaha, Ahtisham Pampori, IEEE Transactions on Electron Devices Wide-bandgap SemiconductorElectrical EngineeringElectronic DevicesGan HemtsPhenomenological Cryogenic Model	2022	28
Modeling of Bias-Dependent Effective Velocity and Its Impact on Saturation Transconductance in AlGaN/GaN HEMTs Ahtisham Pampori, Sheikh Aamir Ahsan, Raghvendra Dangi, IEEE Transactions on Electron Devices Wide-bandgap SemiconductorEngineeringBias-dependent Effective VelocitySaturation TransconductancePower Electronics	2021	19
Modeling and Analysis of Double Channel GaN HEMTs Using a Physics-Based Analytical Model Rasik Rashid Malik, Mehak Ashraf Mir, Zarak Bhat, IEEE Journal of the Electron Devices Society Device ModelingWide-bandgap SemiconductorElectrical EngineeringEngineeringPhysics	2021	12
A Comprehensive RF Characterization and Modeling Methodology for the 5nm Technology Node FinFETs Shivendra Singh Parihar, Ahtisham Pampori, Praveen Dwivedi, IEEE Journal of the Electron Devices Society	2023	10
GaN-based wide-band high-efficiency power amplifier with multi harmonic resonance Mohammad Zaid, Ahtisham Pampori, Mohammad Sajid Nazir, Microelectronics Journal	2024	10

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