Wangran Wu

Auxetic Black Phosphorus: A 2D Material with Negative Poisson’s Ratio

Yuchen Du, Jesse Maassen, Wangran Wu et al. · Nano Letters · 2016 · 241 citations · Full text

Materials Science, Engineering, Physics +14

First demonstration of Ge nanowire CMOS circuits: Lowest SS of 64 mV/dec, highest gmax of 1057 μS/μm in Ge nFETs and highest maximum voltage gain of 54 V/V in Ge CMOS inverters

Heng Wu, Wangran Wu, Mengwei Si et al. · 2015 · 44 citations

Low-power Electronics, Nanowire Height, Electrical Engineering +15

High-Voltage a-IGZO TFTs With the Stair Gate-Dielectric Structure

Guangan Yang, Mengyao Li, Zuoxu Yu et al. · IEEE Transactions on Electron Devices · 2021 · 24 citations

Semiconductor Technology, Stair Gate-dielectric Tfts, Electrical Engineering +15

Experimental Study on NBTI Degradation Behaviors in Si pMOSFETs Under Compressive and Tensile Strains

Wangran Wu, Chang Liu, Jiabao Sun et al. · IEEE Electron Device Letters · 2014 · 23 citations

Electrical Engineering, Engineering, Nbti Degradation Behaviors +15

Demonstration of Ge Nanowire CMOS Devices and Circuits for Ultimate Scaling

Heng Wu, Wangran Wu, Mengwei Si et al. · IEEE Transactions on Electron Devices · 2016 · 21 citations

Engineering, Ultimate Scaling, Integrated Circuits +16