K. Y. Choi

<i>In</i> <i>situ</i> spectroscopic ellipsometry in molecular beam epitaxy

G.N. Maracas, J. L. Edwards, K. Shiralagi et al. · Journal of Vacuum Science & Technology A Vacuum Surfaces and Films · 1992 · 40 citations

Optical Materials, Engineering, Crystal Growth Technology +16

Measurement of GaAs temperature-dependent optical constants by spectroscopic ellipsometry

C. H. Kuo, S. Anand, Ravi Droopad et al. · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 1994 · 38 citations

Optical Materials, Engineering, Optical Testing +18

Optical properties of a single strained InGaAs/GaAs quantum well grown on vicinal GaAs surfaces

Ravi Droopad, R. A. Puechner, K. Shiralagi et al. · Applied Physics Letters · 1991 · 18 citations

Semiconductors, Photonics, Optical Materials +14

Determination of molecular beam epitaxial growth parameters by ellipsometry

Ravi Droopad, C. H. Kuo, S. Anand et al. · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 1994 · 13 citations

Materials Science, Optical Materials, Growth Rates +9

Optical properties of strained asymmetric triangular InGaAs/GaAs multiple quantum wells

Ravi Droopad, K. Y. Choi, R. A. Puechner et al. · Applied Physics Letters · 1991 · 12 citations

Wide-bandgap Semiconductor, Photonics, Photoluminescence +11