R. A. Puechner

Electrical and optical characterization of gas source and solid source MBE low temperature buffers

R. A. Puechner, David A. Johnson, K. Shiralagi et al. · Journal of Crystal Growth · 1991 · 22 citations

Ii-vi Semiconductor, Electrical Engineering, Optical Materials +11

Optical properties of a single strained InGaAs/GaAs quantum well grown on vicinal GaAs surfaces

Ravi Droopad, R. A. Puechner, K. Shiralagi et al. · Applied Physics Letters · 1991 · 18 citations

Semiconductors, Photonics, Optical Materials +14

Trends of deep level electron traps in Al<i>x</i>Ga1−<i>x</i>As grown by molecular beam epitaxy

R. A. Puechner, D. Johnson, G.N. Maracas · Applied Physics Letters · 1988 · 13 citations

Materials Science, Aluminium Nitride, Epitaxial Growth +11

Optical properties of strained asymmetric triangular InGaAs/GaAs multiple quantum wells

Ravi Droopad, K. Y. Choi, R. A. Puechner et al. · Applied Physics Letters · 1991 · 12 citations

Wide-bandgap Semiconductor, Photonics, Photoluminescence +11

h/e Periodicity of weak localization in semiconductor surface superlattices

Jun Ma, R. A. Puechner, W.-P. Liu et al. · Surface Science · 1990 · 11 citations

Engineering, Physics, H/e Periodicity +4