Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 1994 · 13 citations · 0 references
Natural SciencesMaterials EngineeringMaterials ScienceElectronic MaterialsMaterials CharacterizationSemiconductor MaterialsCrystal GrowthElectronic Material CharacterizationEpitaxial GrowthSemiconductor Crystal GrowthSemiconductor Device MaterialsSemiconductor PhysicsActivation EnergyActivation Energy DeterminationDesorptionDesorption ProcessesGrowth RatesMeasurement TechniquesMolecular Beam EpitaxySubstrate Temperature Effects
The use of ellipsometry as an alternative technique for in situ determination of molecular beam epitaxial growth parameters has been demonstrated. Epitaxial growth has been monitored in real time using three discrete wavelengths to extract growth rates and alloy composition. The effect of substrate rotation on the measured growth rates has also been determined by this technique. From measurements of the GaAs growth rates versus substrate temperature, a value of 4.68±0.12 eV for the activation energy for Ga desorption during GaAs growth was obtained. This agrees with values obtained by other measurement techniques.