G. Navarro

Recommended Methods to Study Resistive Switching Devices

Mario Lanza, H.‐S. Philip Wong, Eric Pop et al. · Advanced Electronic Materials · 2018 · 632 citations · Full text

Engineering, Power Electronics, Phase Change Memory +18

Toward ultimate nonvolatile resistive memories: The mechanism behind ovonic threshold switching revealed

Pierre Noé, Anthonin Verdy, F. D’Acapito et al. · Science Advances · 2020 · 143 citations · Full text

Materials Science, Non-volatile Memory, Optical Materials +14

Germanium, antimony, tellurium, their binary and ternary alloys and the impact of nitrogen: An X-ray photoelectron study

Emmanuel Nolot, C. Sabbione, Walter Batista Pessoa et al. · Applied Surface Science · 2020 · 72 citations · Full text

Materials Engineering, Materials Science, Ternary Alloys +6

Narrow Heater Bottom Electrode‐Based Phase Change Memory as a Bidirectional Artificial Synapse

Selina La Barbera, D. R. B. Ly, G. Navarro et al. · Advanced Electronic Materials · 2018 · 65 citations

Engineering, Synaptic Transmission, Narrow Heater Bottom +24

Trade-off between SET and data retention performance thanks to innovative materials for phase-change memory

G. Navarro, M. Coué, Athanasios Kiouseloglou et al. · 2013 · 60 citations

Engineering, Emerging Memory Technology, Computer Architecture +18