Anthonin Verdy - Concepedia

Author

Anthonin Verdy

Commissariat à l'Énergie Atomique et aux Énergies Alternatives ORCID

Also Known As

A. Verdy, Anthonin Verdy, B. Giraud, Verdy, Anthonin

Publications

424

Citations

H-Index

Concepts

All Affiliations

Commissariat à l'Énergie Atomique et aux Énergies Alternatives Laboratoire d'Électronique des Technologies de l'Information CEA Grenoble Institut polytechnique de Grenoble Université Grenoble Alpes

About

Anthonin Verdy is an author at Commissariat à l'Énergie Atomique et aux Énergies Alternatives specializing in engineering, microelectronics, and electrical engineering.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	9	9	341
2	Electrical Engineering	8	8	198
3	Applied Physics	7	7	282
4	Computer Engineering	6	6	165
5	Materials Engineering	1	1	24

Anthonin Verdy

Publications

386

Citations

H-Index

Page 1

	Year	Citations
Toward ultimate nonvolatile resistive memories: The mechanism behind ovonic threshold switching revealed Pierre Noé, Anthonin Verdy, F. D’Acapito, Science Advances Materials ScienceNon-volatile MemoryOptical MaterialsEngineeringPhysics	2020	143
Ge–Sb–S–Se–Te amorphous chalcogenide thin films towards on-chip nonlinear photonic devices Jean‐Baptiste Dory, Christopher Castro-Chavarria, Anthonin Verdy, Scientific Reports	2020	45
Improved Electrical Performance Thanks to Sb and N Doping in Se-Rich GeSe-Based OTS Selector Devices Anthonin Verdy, G. Navarro, Véronique Sousa, EngineeringEmerging Memory TechnologyIntegrated CircuitsSe-rich GeseSemiconductor Device	2017	36
Innovative PCM+OTS device with high sub-threshold non-linearity for non-switching reading operations and higher endurance performance G. Navarro, Anthonin Verdy, N. Castellani, Non-volatile MemoryCross Point DeviceEngineeringEmerging Memory TechnologyComputer Architecture	2017	35
Carbon electrode for Ge-Se-Sb based OTS selector for ultra low leakage current and outstanding endurance Anthonin Verdy, G. Navarro, M. Bernard, Non-volatile MemoryEngineeringEmerging Memory TechnologyTi DiffusionPhase Change Memory	2018	27
In-depth investigation of programming and reading operations in RRAM cells integrated with Ovonic Threshold Switching (OTS) selectors M. Alayan, Elisa Vianello, G. Navarro, Non-volatile MemoryEngineeringMemory DesignEmerging Memory TechnologyStable Memory Window	2017	24
Phase-Change Memory: Performance, Roles and Challenges G. Navarro, G. Bourgeois, Julia Kluge, EngineeringEmerging Memory TechnologyComputer ArchitecturePhase- Change MemoryPhase Change Memory	2018	24
Optimized Reading Window for Crossbar Arrays Thanks to Ge-Se-Sb-N-based OTS Selectors Anthonin Verdy, M. Bernard, J. Garrione, Non-volatile MemoryEngineeringEmerging Memory TechnologyComputer ArchitectureIntegrated Circuits	2018	19
High Temperature Stability and Performance Analysis of N-doped Ge-Se-Sb Based OTS Selector Devices Anthonin Verdy, G. Navarro, M. Bernard, Electrical EngineeringElectronic DevicesEngineeringHigh Temperature StabilityN-doped Ge-se-sb	2018	18
Effect of Nitrogen on the Amorphous Structure and Subthreshold Electrical Conduction of GeSeSb‐Based Ovonic Threshold Switching Thin Films Anthonin Verdy, F. D’Acapito, Jean‐Baptiste Dory, physica status solidi (RRL) - Rapid Research Letters EngineeringOptoelectronic DevicesThin Film Process TechnologySemiconductor DeviceSemiconductors	2019	15

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