Hiromasa Suo

Growth of P-type 4H–SiC single crystals by physical vapor transport using aluminum and nitrogen co-doping

Kazuma Eto, Hiromasa Suo, Tomohisa Kato et al. · Journal of Crystal Growth · 2017 · 39 citations

Materials Engineering, Materials Science, Semiconductor Technology +8

Reduction of threading screw dislocations in 4H-SiC crystals by a hybrid method with solution growth and physical vapor transport growth

Takeshi Mitani, Kazuma Eto, Naoyoshi Komatsu et al. · Journal of Crystal Growth · 2021 · 19 citations

Materials Engineering, Materials Science, Engineering +11

Photoluminescence wavelength from stacking fault with complicated structure in 4H-SiC epitaxial layer

Hiromasa Suo, Tamotsu Yamashita, Kazuma Eto et al. · Japanese Journal of Applied Physics · 2022 · 14 citations

Photonics, Optical Materials, Engineering +14

Evaluation of the increase in threading dislocation during the initial stage of physical vapor transport growth of 4H-SiC

Hiromasa Suo, Susumu Tsukimoto, Kazuma Eto et al. · Japanese Journal of Applied Physics · 2018 · 13 citations

Engineering, Crystal Growth Technology, Mechanical Engineering +16

Difference of double Shockley-type stacking faults expansion in highly nitrogen-doped and nitrogen-boron co-doped n-type 4H-SiC crystals

Hiromasa Suo, Kazuma Eto, T. Ise et al. · Journal of Crystal Growth · 2016 · 12 citations

Engineering, Crystalline Defects, Physics +2