Takeshi Mitani

Raman investigation of strain in Si∕SiGe heterostructures: Precise determination of the strain-shift coefficient of Si bands

S. Nakashima, Takeshi Mitani, Mari Ninomiya et al. · Journal of Applied Physics · 2006 · 93 citations

Engineering, Materials Engineering, Materials Science +17

Growth rate and surface morphology of 4H–SiC crystals grown from Si–Cr–C and Si–Cr–Al–C solutions under various temperature gradient conditions

Takeshi Mitani, Naoyoshi Komatsu, Tomohisa Kato et al. · Journal of Crystal Growth · 2013 · 71 citations

Natural Sciences, Materials Engineering, Materials Science +17

Effect of aluminum addition on the surface step morphology of 4H–SiC grown from Si–Cr–C solution

Takeshi Mitani, Naoyoshi Komatsu, Tomohisa Kato et al. · Journal of Crystal Growth · 2015 · 61 citations

Engineering, Materials Engineering, Materials Science +15

Deep ultraviolet Raman scattering characterization of ion-implanted SiC crystals

S. Nakashima, Takeshi Mitani, Junji Senzaki et al. · Journal of Applied Physics · 2005 · 52 citations

Natural Sciences, Materials Engineering, Materials Science +17

Raman characterization of damaged layers of 4H-SiC induced by scratching

S. Nakashima, Takeshi Mitani, Masaru Tomobe et al. · AIP Advances · 2016 · 50 citations · Full text

Engineering, Materials Engineering, Materials Science +17