A. Antolini

Investigations on the interface abruptness in CBE-grown InGaAs/InP QW structures

A. Antolini, Patrick J. Bradley, C. Cacciatore et al. · Journal of Electronic Materials · 1992 · 38 citations

Wide-bandgap Semiconductor, Engineering, Rf Semiconductor +5

Influence of growth parameters on the interface abruptness in CBE-grown InGaAs/InP QWs and SLs

F. Genova, A. Antolini, L. Francesio et al. · Journal of Crystal Growth · 1992 · 35 citations

Electrical Engineering, Cbe-grown Ingaas/inp Qws, Engineering +3

The effects of roughness and composition variation at the InP/InGaAs and InGaAs/InP interfaces on CBE grown quantum wells

A. Antolini, L. Francesio, L Gastaldi et al. · Journal of Crystal Growth · 1993 · 22 citations

Semiconductor Technology, Engineering, Physics +7

A study of deep levels by transient spectroscopy on <i>p</i>-type liquid-phase-epitaxial Ga<i>x</i>In1−<i>x</i>As<i>y</i>P1−<i>y</i> grown on semi-insulating InP

J.L. Pelloie, G. Guillot, A. Nouailhat et al. · Journal of Applied Physics · 1986 · 15 citations

Engineering, Ternary Layer, Chemistry +17

Growth parameter optimization of short period ( &lt; 50 Å) InGaAs/InP short period superlattices by chemical beam epitaxy for photonic devices

C. Rigo, A. Antolini, C. Cacciatore et al. · Journal of Crystal Growth · 1994 · 12 citations

Photonics, Engineering, Physics +10