Growth parameter optimization of short period ( < 50 Å) InGaAs/InP short period superlattices by chemical beam epitaxy for photonic devices

Investigations on the interface abruptness in CBE-grown InGaAs/InP QW structures

A. Antolini, Patrick J. Bradley, C. Cacciatore et al. · Journal of Electronic Materials · 1992 · 38 citations

Wide-bandgap Semiconductor, Engineering, Rf Semiconductor +5

Influence of growth parameters on the interface abruptness in CBE-grown InGaAs/InP QWs and SLs

F. Genova, A. Antolini, L. Francesio et al. · Journal of Crystal Growth · 1992 · 35 citations

Electrical Engineering, Cbe-grown Ingaas/inp Qws, Engineering +3

The effects of roughness and composition variation at the InP/InGaAs and InGaAs/InP interfaces on CBE grown quantum wells

A. Antolini, L. Francesio, L Gastaldi et al. · Journal of Crystal Growth · 1993 · 22 citations

Semiconductor Technology, Engineering, Physics +7

Low-power, refractive nonlinearity in InGaAs/InP multiquantum well waveguide

C. Cacciatore, D. Campi, C. Coriasso et al. · Electronics Letters · 1992 · 17 citations

Photonics, Refractive Nonlinearity, Optical Materials +14

Growth of GaInAs(P) and GaInAsP/GaInAs MQW structures by CBE

A. Rudra, J.‐F. Carlin, P. Ruterana et al. · Journal of Crystal Growth · 1992 · 17 citations · Full text

Engineering, Physics, Crystal Growth Technology +6