C. Rigo

On the mechanisms of strain release in molecular-beam-epitaxy-grown In<i>x</i>Ga1−<i>x</i>As/GaAs single heterostructures

A. V. Drigo, A. Carnera, F. Genova et al. · Journal of Applied Physics · 1989 · 117 citations

Semiconductors, Materials Science, Layer Thickness +14

Structural and optical investigation of InAsxP1−x/InP strained superlattices

Carlo Lamberti, Silvia Bordiga, F. Boscherini et al. · Journal of Applied Physics · 1998 · 40 citations

Materials Science, Optical Investigation, Optical Materials +15

Investigations on the interface abruptness in CBE-grown InGaAs/InP QW structures

A. Antolini, Patrick J. Bradley, C. Cacciatore et al. · Journal of Electronic Materials · 1992 · 38 citations

Wide-bandgap Semiconductor, Engineering, Rf Semiconductor +5

Influence of growth parameters on the interface abruptness in CBE-grown InGaAs/InP QWs and SLs

F. Genova, A. Antolini, L. Francesio et al. · Journal of Crystal Growth · 1992 · 35 citations

Electrical Engineering, Cbe-grown Ingaas/inp Qws, Engineering +3

All-optical switching and pulse routing in a distributed-feedback waveguide device

C. Coriasso, D. Campi, C. Cacciatore et al. · Optics Letters · 1998 · 35 citations