L. J. Mandalapu

High-mobility Sb-doped p-type ZnO by molecular-beam epitaxy

Faxian Xiu, Zheng Yang, L. J. Mandalapu et al. · Applied Physics Letters · 2005 · 314 citations

Materials Science, Semiconductors, Sb Dopant +13

Photoluminescence study of Sb-doped p-type ZnO films by molecular-beam epitaxy

Faxian Xiu, Zheng Yang, L. J. Mandalapu et al. · Applied Physics Letters · 2005 · 209 citations

Materials Science, Ii-vi Semiconductor, Photoluminescence +11

Sb-doped p-ZnO∕Ga-doped n-ZnO homojunction ultraviolet light emitting diodes

Sheng Chu, Jae‐Hong Lim, L. J. Mandalapu et al. · Applied Physics Letters · 2008 · 138 citations

N-type Zno Layers, Optical Materials, Low Specific Resistivity +17

p -type behavior from Sb-doped ZnO heterojunction photodiodes

L. J. Mandalapu, Faxian Xiu, Zheng Yang et al. · Applied Physics Letters · 2006 · 123 citations

Materials Science, P-type Zno, Electrical Engineering +12

p -type ZnO films with solid-source phosphorus doping by molecular-beam epitaxy

Faxian Xiu, Zheng Yang, L. J. Mandalapu et al. · Applied Physics Letters · 2006 · 122 citations

Materials Science, Semiconductors, Photoluminescence +13