p -type behavior from Sb-doped ZnO heterojunction photodiodes

Abstract

Antimony (Sb) doping was used to realize p-type ZnO films on n-Si (100) substrates by molecular beam epitaxy. These samples were fabricated into p-n heterojunction diodes. p-type behavior of Sb-doped ZnO was studied by carrying out I-V and capacitance-voltage (C-V) measurements. I-V curves showed rectifying behavior similar to a p-type Schottky diode with a turn-on voltage around 2.4V, which is consistent with the Schottky barrier of about 2.2V obtained from C-V characterization. Good photoresponse in the UV region was obtained, which further proved that Sb doping could be used to fabricate p-type ZnO for photodetector and other optoelectronic applications.