Sb-doped p-ZnO∕Ga-doped n-ZnO homojunction ultraviolet light emitting diodes

Abstract

ZnO p-n homojunction light emitting diodes were fabricated based on p-type Sb-doped ZnO∕n-type Ga-doped ZnO thin films. Low resistivity Au∕NiO and Au∕Ti contacts were formed on top of p-type and n-type ZnO layers, respectively. Au∕NiO contacts on p-type ZnO exhibited a low specific resistivity of 7.4×10−4Ωcm2. The light emitting diodes yielded strong near-band-edge emissions in temperature-dependent and injection current-dependent electroluminescence measurements.