M. M. Rozhavskaya

Single quantum well deep-green LEDs with buried InGaN/GaN short-period superlattice

W. V. Lundin, A. E. Nikolaev, A. V. Sakharov et al. · Journal of Crystal Growth · 2010 · 35 citations

Photonics, Quantum Science, Electrical Engineering +9

High growth rate MOVPE of Al(Ga)N in planetary reactor

W. V. Lundin, A. E. Nikolaev, M. A. Yagovkina et al. · Journal of Crystal Growth · 2011 · 21 citations

Materials Science, Materials Engineering, Aluminium Nitride +4

Determination of the diffusion lengths of Ga adatoms using GaN stripe profiling

M. M. Rozhavskaya, W. V. Lundin, S. I. Troshkov et al. · physica status solidi (a) · 2015 · 20 citations · Full text

Materials Science, Diffusion Lengths, Wide-bandgap Semiconductor +13

Fast AlGaN growth in a whole composition range in planetary reactor

W. V. Lundin, A. E. Nikolaev, M. M. Rozhavskaya et al. · Journal of Crystal Growth · 2012 · 19 citations

Chemical Engineering, Engineering, Whole Composition Range +3

Growth and structure of GaN layers on silicon carbide synthesized on a Si substrate by the substitution of atoms: A model of the formation of V-defects during the growth of GaN

M. M. Rozhavskaya, А. V. Myasoedov, S. I. Troshkov et al. · Physics of the Solid State · 2015 · 19 citations