A.-M. Van Bavel

Low-temperature anneal of the divacancy in <i>p</i>-type silicon: A transformation from V2 to V<i>x</i>O<i>y</i> complexes?

M.-A. Trauwaert, Jan Vanhellemont, H.E. Maes et al. · Applied Physics Letters · 1995 · 46 citations

Inorganic Chemistry, Engineering, Crystalline Defects +15

Stratospheric chemical ionization mass spectrometry: nitric acid detection by different ion molecule reaction schemes

E. Arijs, A. Barassin, E. Kopp et al. · International Journal of Mass Spectrometry · 1998 · 17 citations

Engineering, Analytical Instrumentation, Atmospheric Science +9

Influence of oxygen and carbon on the generation and annihilation of radiation defects in silicon

M.-A. Trauwaert, Jan Vanhellemont, H.E. Maes et al. · Materials Science and Engineering B · 1996 · 15 citations

Engineering, Physics, Applied Physics +6

Growth and properties of ion beam synthesized Si/Co<i>x</i>Ni1−<i>x</i>Si2/Si(111) structures

Ming Wu, J. De Wächter, A.-M. Van Bavel et al. · Journal of Applied Physics · 1994 · 12 citations

Materials Science, Materials Engineering, Type B Component +12

Implantation temperature dependent distribution of NiSi2 formed by ion beam synthesis in silicon

Jan Vanhellemont, H. Bender, M. F. Wu et al. · Applied Physics Letters · 1993 · 11 citations

Materials Science, Materials Engineering, Ion Implantation +13