Perpendicular spin transfer torque magnetic random access memories with high spin torque efficiency and thermal stability for embedded applications (invited)

Luc Thomas, Guenole Jan, Huanlong Liu, +14

Journal of Applied Physics

Non-volatile MemoryEngineeringEmerging Memory TechnologyMagnetic ResonanceComputer Architecture +22

Spin-valve RAM cell

D.D. Tang, P.K. Wang, V. S. Speriosu, +2

IEEE Transactions on Magnetics

SpintronicsMagnetismElectrical EngineeringEngineeringNon-volatile Memory +13

Quantifying data retention of perpendicular spin-transfer-torque magnetic random access memory chips using an effective thermal stability factor method

Luc Thomas, Guenole Jan, Son Le, +1

Applied Physics Letters

Non-volatile MemoryEngineeringEmerging Memory TechnologyChip LevelMagnetic Resonance +20

Demonstration of fully functional 8Mb perpendicular STT-MRAM chips with sub-5ns writing for non-volatile embedded memories

Guenole Jan, Luc Thomas, Son Le, +14

Non-volatile MemoryEngineeringEmerging Memory TechnologyMtj DesignComputer Architecture +16

Fully functional perpendicular STT-MRAM macro embedded in 40 nm logic for energy-efficient IOT applications

Yu Lu, Tom Zhong, W.N. Hsu, +30

Non-volatile MemoryEnergy-efficient Iot ApplicationsEngineeringEmerging Memory TechnologyComputer Architecture +14

A statistical study of magnetic tunnel junctions for high-density spin torque transfer-MRAM (STT-MRAM)

R. S. Beach, Tai Min, C. Horng, +32

EngineeringSpintronic MaterialSpin DynamicSpin PhenomenonMagnetoresistance +14

Ultrathin perpendicular magnetic anisotropy CoFeB free layers for highly efficient, high speed writing in spin-transfer-torque magnetic random access memory

Jodi Iwata-Harms, Guenole Jan, S. Serrano-Guisan, +18

Scientific Reports

Solving the paradox of the inconsistent size dependence of thermal stability at device and chip-level in perpendicular STT-MRAM

Luc Thomas, Guenole Jan, Son Le, +15

Device DiameterSpintronicsElectrical EngineeringInconsistent Size DependenceEngineering +11

Achieving Sub-ns switching of STT-MRAM for future embedded LLC applications through improvement of nucleation and propagation switching mechanisms

Guenole Jan, Luc Thomas, Son Le, +16

Non-volatile MemoryEngineeringEmerging Memory TechnologyComputer ArchitectureLlc Applications +17

Demonstration of Ultra-Low Voltage and Ultra Low Power STT-MRAM designed for compatibility with 0x node embedded LLC applications

Guenole Jan, L. Thomas, Son Le, +17

Low-power ElectronicsNon-volatile MemoryElectrical EngineeringEngineeringElectronic Memory +11