IEEE Transactions on Magnetics · 1995 · 152 citations · 3 references
EngineeringElectrical EngineeringMaterials ScienceMemoryMicroelectronicsSemiconductor DevicesMagnetic Recording MaterialsMemory DevicesMemory Subsystem DesignMemristive MaterialsSpintronicsBistable Cell StatesCell DesignMagnetoresistive Random-access MemoryNon-volatile Memory DesignNonvolatile MemoryNonvolatile Memory DevicesSiliconSpin Valves
This paper presents the design and the characteristics of a nonvolatile memory cell using giant magneto-resistance effects. Unlike other magnetic memory cells, the present cell design exploits the full /spl Delta/R of the spin valve material. A dc voltage difference between the two cell states of 30 mV range has been realized on a cell stripe only 6-microns long, making it compatible with the high-speed sensing schemes presently employed in silicon RAMs. The cell switches states in sub-nanoseconds. Its performance/density is close to that of the static RAM cell.
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