Huanlong Liu

Perpendicular spin transfer torque magnetic random access memories with high spin torque efficiency and thermal stability for embedded applications (invited)

Luc Thomas, Guenole Jan, Huanlong Liu et al. · Journal of Applied Physics · 2014 · 238 citations

Non-volatile Memory, Engineering, Emerging Memory Technology +24

Demonstration of fully functional 8Mb perpendicular STT-MRAM chips with sub-5ns writing for non-volatile embedded memories

Guenole Jan, Luc Thomas, Son Le et al. · 2014 · 62 citations

Non-volatile Memory, Engineering, Emerging Memory Technology +18

High-temperature thermal stability driven by magnetization dilution in CoFeB free layers for spin-transfer-torque magnetic random access memory

Jodi Iwata-Harms, Guenole Jan, Huanlong Liu et al. · Scientific Reports · 2018 · 55 citations · Full text

Ultrathin perpendicular magnetic anisotropy CoFeB free layers for highly efficient, high speed writing in spin-transfer-torque magnetic random access memory

Jodi Iwata-Harms, Guenole Jan, S. Serrano-Guisan et al. · Scientific Reports · 2019 · 41 citations · Full text

Solving the paradox of the inconsistent size dependence of thermal stability at device and chip-level in perpendicular STT-MRAM

Luc Thomas, Guenole Jan, Son Le et al. · 2015 · 37 citations

Device Diameter, Spintronics, Electrical Engineering +13