A. Rodriguez-Fernandez

A 3D kinetic Monte Carlo simulation study of resistive switching processes in Ni/HfO₂/Si-n⁺-based RRAMs

Samuel Aldana, P. García‐Fernández, A. Rodriguez-Fernandez et al. · Journal of Physics D Applied Physics · 2017 · 57 citations

Engineering, Electrical Engineering, Materials Science +17

Effect of the voltage ramp rate on the set and reset voltages of ReRAM devices

A. Rodriguez-Fernandez, C. Cagli, L. Perniola et al. · Microelectronic Engineering · 2017 · 33 citations

Engineering, Computer Engineering, Electrical Engineering +9

Resistive Switching with Self-Rectifying Tunability and Influence of the Oxide Layer Thickness in Ni/HfO₂/n⁺-Si RRAM Devices

A. Rodriguez-Fernandez, Samuel Aldana, F. Campabadal et al. · IEEE Transactions on Electron Devices · 2017 · 33 citations · Full text

Engineering, Materials Engineering, Materials Science +17

Switching Voltage and Time Statistics of Filamentary Conductive Paths in HfO₂-Based ReRAM Devices

A. Rodriguez-Fernandez, C. Cagli, J. Suñé et al. · IEEE Electron Device Letters · 2018 · 27 citations · Full text

Engineering, Electrical Engineering, Materials Science +17

Characterization of HfO 2 -based devices with indication of second order memristor effects

A. Rodriguez-Fernandez, C. Cagli, L. Perniola et al. · Microelectronic Engineering · 2018 · 21 citations · Full text

Engineering, Materials Engineering, Materials Science +13